| Issue |
Eur. Phys. J. Appl. Phys.
Volume 51, Number 2, August 2010
|
|
|---|---|---|
| Article Number | 20601 | |
| Number of page(s) | 4 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap/2010094 | |
| Published online | 22 July 2010 | |
https://doi.org/10.1051/epjap/2010094
Filed emission characterizes of size-controllable Si nanopillar arrays
College of Electronic Science and Engineering, Nanjing University of Posts & Telecommunications, Nanjing, 210003, P.R. China
Corresponding author: Liw@njupt.edu.cn
Received:
3
November
2009
Revised:
28
April
2010
Accepted:
4
June
2010
Published online:
22
July
2010
Here, large-scale ordered periodic silicon pillar arrays were prepared using nanosphere lithography. And, the diameter and the density of nanopillar arrays are determined by the initial diameter of polystyrene (PS) spheres. In our experiment, the nanopillar has a diameter of approximately 50 nm, and the density of silicon pillar is 6×109/cm2. This array shows a field emission property with a low turn-on field of 9.8 V μm-1 at a current density of 10 μA cm-2. And the field enhancement factor is about 560. The Fowler-Nordheim plot obtained is linearly dependent, indicating that the emission current arises from the F-N tunnelling effect.
© EDP Sciences, 2010
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