Eur. Phys. J. Appl. Phys.
Volume 48, Number 1, October 2009
|Number of page(s)||4|
|Section||Surfaces, Interfaces and Films|
|Published online||04 July 2009|
Optical and structural properties of ZnSxSe1−x thin films deposited by thermal evaporation
Optics Laboratories, P.O. Box 1021, Islamabad, Pakistan
2 Pakistan Institute of Engineering and Applied Sciences, P.O. Nilore, Islamabad, Pakistan
3 Physics Division, Pakistan Institute of Nuclear Science and Technology, P.O. Nilore, Islamabad, Pakistan
Corresponding author: firstname.lastname@example.org
Accepted: 24 April 2009
Published online: 4 July 2009
The ZnSxSe (0 ≤ x ≤ 1) films were deposited on soda lime glass substrates by thermal evaporation technique. Optical and structural properties of these films were compared with the ZnSxSe films deposited by various other techniques. XRD measurement showed that ZnSxSe films are polycrystalline in nature with the preferred orientation along . It was observed that the lattice constant decreases and the optical energy band gap increases with the sulfur content of the film. These results are in good agreement with the properties of ZnSxSe films deposited by various other methods. Additionally, it was observed that the refractive index of a ZnSxSe film decreases with increasing sulfur content. The results reported in this paper suggest that the lattice constants, optical energy band gap and refractive index of ZnSxSe film can be tailored for a specific application by selecting suitable value of x.
PACS: 78.20.Ci – Optical constants / 81.05.Dz – II-VI semiconductors / 81.15.Ef – Vacuum deposition / 61.43.Bn – Structural modeling
© EDP Sciences, 2009
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