Issue |
Eur. Phys. J. Appl. Phys.
Volume 99, 2024
|
|
---|---|---|
Article Number | 30 | |
Number of page(s) | 10 | |
DOI | https://doi.org/10.1051/epjap/2024230185 | |
Published online | 19 November 2024 |
https://doi.org/10.1051/epjap/2024230185
Original Article
Synthesis and assessment of the Mo/MoO3/CZTS/Ag diode fabricated by one-pot hydrothermal route: impact of temperature
1
Applied physics department, School of Applied Sciences, University of Technology, Baghdad, Iraq
2
Center of Solar Energy Research, Ministry of Science and Technology, Baghdad, Iraq
* e-mails: Salma_aljawad@yahoo.com; Selma.M.AlJawad@uotechnology.edu.iq
Received:
23
September
2023
Accepted:
16
October
2024
Published online: 19 November 2024
A facile one-step hydrothermal method was utilized to prepare Cu2ZnSnS4 (CZTS) film employing ethylenediaminetetraacetic acid (EDTA) as a complexing agent. An effective molybdenum oxide layer was also formed using the same approach for forming the Cu2ZnSnS4 film. The influence of preparation temperature on structural, morphology, and optical characteristics was studied. The formation of crystalline kesterite phase Cu2ZnSnS4 films with preferred orientation along the (112) plane was confirmed by X-ray diffraction and Raman spectroscopy, and it was also demonstrated that structure property changes with preparation temperatures: kesterite phase Cu2ZnSnS4 is formed at lower preparation temperatures and kesterite phase Cu2ZnSnS4 and Cu2S are formed with increasing preparation temperature. Also, Raman's analysis confirmed the formation of a molybdenum oxide layer on the Mo substrate. Field emission scanning electron microscopy revealed that surface morphology changes from leaves of trees to flake-flowers. According to UV-visible analysis, Cu2ZnSnS4 films exhibited high and wide absorbance spectra in the visible and infrared regions and a band gap between (1.67–1.9) eV. Photoluminescence analysis revealed emission peaks at (1.569, 1.55, and 1.56) eV for samples prepared at (160, 200, and 230) °C, respectively, which is very close to the band's gap of Cu2ZnSnS4. Finally, the electrical study of Mo/MoO3/CZTS/Ag junctions was performed using current-voltage (I–V) measurement.
Key words: Cu2ZnSnS4 (CZTS) film / One-pot hydrothermal approach / Mo/MoO3/CZTS/Ag diode
© EDP Sciences, 2024
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.