Issue |
Eur. Phys. J. Appl. Phys.
Volume 48, Number 1, October 2009
|
|
---|---|---|
Article Number | 10302 | |
Number of page(s) | 5 | |
Section | Semiconductors and Devices | |
DOI | https://doi.org/10.1051/epjap/2009115 | |
Published online | 04 July 2009 |
https://doi.org/10.1051/epjap/2009115
Effect of tellurium substitution in Sn10Sb20Se70−X TeX (0 < X < 12) amorphous chalcogenide system
Semiconductor Laboratory, Department of Applied Physics, Guru Nanak Dev
University, Amritsar 143005, India
Corresponding author: rcohri@gmail.com
Received:
14
September
2008
Accepted:
27
April
2009
Published online:
4
July
2009
The as-prepared samples of Sn10Sb20Se TeX
chalcogenide system were amorphous as evidenced by X-ray diffraction and
Differential scanning calorimetry studies. The different crystalline phases
emerged in annealed Sn10Sb20Se
TeX samples have been
identified. Glass transition temperature Tg of the as-prepared samples
decreases sharply with tellurium substitution upto 2 at% and then it
starts increasing upto 10 at% and decreases again on further substitution
of tellurium. The change in glass transition temperature Tg has been
explained based on bond formation energy of different heteropolar bonds and
crystalline phases obtained in the annealed samples with different tellurium
contents.
PACS: 64.70.kj – Glasses / 77.84.Bw – Elements, oxides, nitrides, borides, carbides, chalcogenides, etc. / 64.70.ph – Nonmetallic glasses (silicates, oxides, selenides, etc.) / 81.70.pg – Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis / 61.05.cp – X-ray diffraction
© EDP Sciences, 2009
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