Eur. Phys. J. Appl. Phys.
Volume 48, Number 1, October 2009
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||04 July 2009|
Effect of tellurium substitution in Sn10Sb20Se70−X TeX (0 < X < 12) amorphous chalcogenide system
Semiconductor Laboratory, Department of Applied Physics, Guru Nanak Dev
University, Amritsar 143005, India
Corresponding author: firstname.lastname@example.org
Accepted: 27 April 2009
Published online: 4 July 2009
The as-prepared samples of Sn10Sb20Se TeX chalcogenide system were amorphous as evidenced by X-ray diffraction and Differential scanning calorimetry studies. The different crystalline phases emerged in annealed Sn10Sb20Se TeX samples have been identified. Glass transition temperature Tg of the as-prepared samples decreases sharply with tellurium substitution upto 2 at% and then it starts increasing upto 10 at% and decreases again on further substitution of tellurium. The change in glass transition temperature Tg has been explained based on bond formation energy of different heteropolar bonds and crystalline phases obtained in the annealed samples with different tellurium contents.
PACS: 64.70.kj – Glasses / 77.84.Bw – Elements, oxides, nitrides, borides, carbides, chalcogenides, etc. / 64.70.ph – Nonmetallic glasses (silicates, oxides, selenides, etc.) / 81.70.pg – Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis / 61.05.cp – X-ray diffraction
© EDP Sciences, 2009
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