| Issue |
Eur. Phys. J. Appl. Phys.
Volume 47, Number 3, September 2009
|
|
|---|---|---|
| Article Number | 31001 | |
| Number of page(s) | 5 | |
| Section | Plasma, Discharges and Processes | |
| DOI | https://doi.org/10.1051/epjap/2009109 | |
| Published online | 12 June 2009 | |
https://doi.org/10.1051/epjap/2009109
Substrate-plasma interaction during amorphous silicon thin films growth by sputtering technique
Laboratoire de Couches Minces et Interfaces, Faculté des Sciences Exactes, Université de Constantine, 2500 Constantine, Algeria
Corresponding author: aida_salah@yahoo.fr
Received:
12
March
2009
Revised:
6
April
2009
Accepted:
17
April
2009
Published online:
12
June
2009
The present paper deals with the investigation of Argon ions – substrate interactions during film growth and their influence on sputtered hydrogenated amorphous silicon (a-Si:H) thin films structural properties. These interactions are characterized by mean of the calculation of the energy distribution of Ar ions striking the substrate and their striking force measurement in the case of Rf diode sputtering. The influence of the Ar ions bombardment on structural and physical properties of amorphous silicon thin properties is discussed. The ion bombardment affects the film growth processes and consequently, it causes films densification and evolution of film microstructure from amorphous state at low power towards a microcrystalline material with increasing the Rf power.
PACS: 52.40.-W – Plasma interactions (nonlaser) / 52.40.Hf – Plasma-material interactions; boundary layer effects / 52.77.Dq – Plasma-based ion implantation and deposition
© EDP Sciences, 2009
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