| Issue |
Eur. Phys. J. Appl. Phys.
Volume 47, Number 2, August 2009
11th International Symposium on High Pressure, Low Temperature Plasma Chemistry (HAKONE XI)
|
|
|---|---|---|
| Article Number | 22820 | |
| Number of page(s) | 6 | |
| Section | 11th International Symposium on High Pressure, Low Temperature Plasma Chemistry (HAKONE XI) | |
| DOI | https://doi.org/10.1051/epjap/2009079 | |
| Published online | 28 April 2009 | |
https://doi.org/10.1051/epjap/2009079
Deposition of functional hydrogenated amorphous carbon-nitride film (a-CN:H) using C2H4/N2 townsend dielectric barrier discharge
1
Université de Toulouse, UPS, INPT, LAPLACE – Laboratoire Plasma et
Conversion d'Énergie, 118 route de Narbonne, 31062 Toulouse Cedex 9, France
2
CNRS, LAPLACE, 31062 Toulouse, France
3
University Hospital Research Center CHUQ, St-Francois d'Assise
Hospital, 10 rue de l'Espinay, G1L3L5, Quebec, Canada
4
Surface Engineering Laboratory, CERMA, Department of Mining,
Metallurgical and Materials Engineering, Université Laval, G1V 0A6,
Quebec, Canada
5
CNRS, PROMES, Tecnosud, 66100 Perpignan, France
Corresponding author: christian.sarra-bournet.1@ulaval.ca
Received:
6
January
2009
Accepted:
2
March
2009
Published online:
28
April
2009
The present work is an investigation of the chemical composition and growth profile of an hydrogenated amorphous carbon nitride film (a-CN:H) deposited by atmospheric pressure Townsend discharge in C2H4/N2. Various surface characterization techniques were used to evaluate the coatings properties (X-ray Photoelectron Spectroscopy, Fourier Transform Infrared Spectroscopy, Profilometry, Scanning Electron Microscopy). The coating obtained presented a high N/C ratio and a high concentration of N-functionalities. The results revealed two different growth mechanisms depending on the residence time of the precursor molecules; at first, the growth is mainly due to radicals then a powder formation mechanism appears, therefore leading to different chemical composition and surface properties.
PACS: 52.80.Dy – Low-field and Townsend discharges / 52.77.Dq – Plasma-based ion implantation and deposition / 68.37.-d – Microscopy of surfaces, interfaces, and thin films / 68.55.-a – Thin film structure and morphology
© EDP Sciences, 2009
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