Eur. Phys. J. Appl. Phys.
Volume 45, Number 2, February 2009
|Number of page(s)||3|
|Section||Semiconductors and Devices|
|Published online||31 January 2009|
Theoretical and experimental operating wavelength of GaAs/Al0.25Ga0.75As IR photodetectors
Équipe d'Étude des Matériaux Optoélectroniques (E.E.M.O.),
LP2M2E F.S.T.G., BP 549 Marrakech, Morocco
2 Foundation for Research and Technology – Hellas (FORTH)/I.E.S.L Microelectronics, Research Group Vassilika Vouton, P.O. Box 1527, 71110 Heraklion, Crete, Greece
Corresponding author: email@example.com
Accepted: 9 November 2008
Published online: 31 January 2009
IR photodetectors based on GaAs/Al0.25Ga0.75As multiquantum wells (QWIP) grown by molecular beam epitaxy (MBE) are studied. The envelop function formalism is used to determine the theoretical intersubband transition energies. The electronic states are calculated in both parabolic and non parabolic cases. IR spectroscopy transmission is used as the experimental technique to evaluate the optical absorption. The measures are made at 77 K for incidence at both 45° and Brewster angles geometries. The last experimental results compare well with the theoretical ones and correspond to 10–12 m operating wavelength.
PACS: 78.67.De – Quantum wells
© EDP Sciences, 2009
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