Eur. Phys. J. Appl. Phys.
Volume 43, Number 1, July 2008
|Page(s)||31 - 36|
|Section||Semiconductors and Devices|
|Published online||19 June 2008|
Optical properties of Zn doped GaP single crystals
Physics Department, Faculty of Education, Ain Shams University, Rorxy Square 11757, Cairo, Egypt
Corresponding author: firstname.lastname@example.org
Accepted: 21 April 2008
Published online: 19 June 2008
The optical properties of Zn doped GaP single crystals were investigated in the spectral range of 200–2500 nm. It was found that the spectral distributions of R, n, reflect sharp structure due to valance conduction band transitions (Eg, E0, E1 and E2) having the energies 2.17, 2.706, 3.708 and 5.245 eV, respectively. The tested samples exhibit indirect allowed optical transition associated with two phonons of energies 24.5 and, 58.7 meV. The free carrier concentration was found to be 2.11 × 1018 cm−3. The oscillation energy Eosc, dispersion energy Ed, lattice dielectric constant , and optical dielectric constant at infinite frequency were, also, calculated and found to be the values 4.4 eV, 38 eV, 10.27 and 9.7, respectively.
PACS: 78.20.Ci – Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
© EDP Sciences, 2008
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