Eur. Phys. J. Appl. Phys.
Volume 43, Number 1, July 2008
|Page(s)||73 - 77|
|Section||Surfaces, Interfaces and Films|
|Published online||19 June 2008|
The interface optical phonon and electron-phonon interaction in GaN/AlN spherical heterostructures
Department of Physics, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, P.R. China
2 College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, Henan, P.R. China
Corresponding author: firstname.lastname@example.org
Revised: 18 February 2008
Accepted: 25 April 2008
Published online: 19 June 2008
Based on the dielectric-continuum model, the expression of polarization eigenvector, the dispersion relations, and the electron-phonon interaction Fröhlich-like Hamiltonian for interface optical (IO) phonons in multilayer GaN/AlN spherical heterostructures are obtained. As an application of the theory, the dispersion relations and electron-phonon coupling function strengths of the IO phonons are calculated for four-layer GaN/AlN/GaN/AlN spherical heterostructures. The results show that the lower frequency phonons have a much greater contribution to the coupling function than higher frequency phonons.
PACS: 63.20.Kr – Phonon-electron and phonon-phonon interactions / 71.38.-k – Polarons and electron-phonon interactions / 73.20.At – Surface states, band structure, electron density of states
© EDP Sciences, 2008
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