| Issue |
Eur. Phys. J. Appl. Phys.
Volume 42, Number 3, June 2008
|
|
|---|---|---|
| Page(s) | 275 - 279 | |
| Section | Laser, Optics, Optoelectronics and Nanophotonics | |
| DOI | https://doi.org/10.1051/epjap:2008075 | |
| Published online | 30 April 2008 | |
https://doi.org/10.1051/epjap:2008075
LD-pumped GaAs passively Q-switched Nd: YVO4/YVO4 green laser by intracavity frequency-doubling with a MgO-PPLN
School of Information Science and Engineering, Shandong University, Jinan
250100, P.R. China
Corresponding author: anjing@mail.sdu.edu.cn
Received:
2
January
2008
Revised:
1
March
2008
Accepted:
5
March
2008
Published online:
30
April
2008
A diode-pumped GaAs-passively-Q-switched intracavity-frequency-doubled Nd:YVO4/YVO4 green laser with a MgO-PPLN is presented. The characteristics of the passively Q-switched green laser pulses have been investigated. At the maximum incident pump power of 5.19 W, the minimum green-light pulse width of 26.4 ns has been obtained at a repetition rate of 134 kHz. The rate equations are presented to simulate the process of the green laser, and the numerical solutions of the coupled rate equations accord with the experimental results.
PACS: 42.55.Xi – Diode-pumped lasers / 42.60.Gd – Q-switching / 42.60.Jf – Beam characteristics: profile, intensity, and power; spatial pattern formation
© EDP Sciences, 2008
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