| Issue |
Eur. Phys. J. Appl. Phys.
Volume 39, Number 3, September 2007
|
|
|---|---|---|
| Page(s) | 233 - 236 | |
| Section | Laser and Optics | |
| DOI | https://doi.org/10.1051/epjap:2007117 | |
| Published online | 12 July 2007 | |
https://doi.org/10.1051/epjap:2007117
Passively Q-switched mode-locking of diode-pumped Nd:YVO4 laser with GaAs intracavity absorber grown at low temperature
1
College of Physics and Electronics, Shandong Normal
University, Jinan 250014, P.R. China
2
Institute of Semiconductors, Chinese Academy of Sciences, Beijing
100022, P.R. China
Corresponding author: jieliu@sdnu.edu.cn
Received:
25
May
2007
Accepted:
14
June
2007
Published online:
12
July
2007
Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q-switched and mode-locked (QML) 1064 nm operation was achieved in a very simple compact plane-concave cavity Nd:YVO4 laser, it was so short that the pulses can be used as Q-switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q-switched pulse was 2.94 kW and 32.3 µJ, respectively. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of 800 MHz.
PACS: 42.55.Xi – Diode-pumped lasers / 42.60.Fc – Modulation, tuning, and mode locking / 42.60.Gd – Q-switching / 42.70.Hj – Laser materials
© EDP Sciences, 2007
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