Eur. Phys. J. Appl. Phys.
Volume 39, Number 3, September 2007
|Page(s)||233 - 236|
|Section||Laser and Optics|
|Published online||12 July 2007|
Passively Q-switched mode-locking of diode-pumped Nd:YVO4 laser with GaAs intracavity absorber grown at low temperature
College of Physics and Electronics, Shandong Normal
University, Jinan 250014, P.R. China
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100022, P.R. China
Corresponding author: firstname.lastname@example.org
Accepted: 14 June 2007
Published online: 12 July 2007
Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q-switched and mode-locked (QML) 1064 nm operation was achieved in a very simple compact plane-concave cavity Nd:YVO4 laser, it was so short that the pulses can be used as Q-switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q-switched pulse was 2.94 kW and 32.3 µJ, respectively. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of 800 MHz.
PACS: 42.55.Xi – Diode-pumped lasers / 42.60.Fc – Modulation, tuning, and mode locking / 42.60.Gd – Q-switching / 42.70.Hj – Laser materials
© EDP Sciences, 2007
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