Eur. Phys. J. Appl. Phys.
Volume 42, Number 2, May 2008
|Page(s)||99 - 102|
|Section||Surfaces, Interfaces and Films|
|Published online||28 March 2008|
Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
Laboratoire de Photovoltaïque et de Semiconducteurs, Centre de Recherche des Sciences et Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
2 Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France
Corresponding author: Mohamed.firstname.lastname@example.org
Revised: 13 January 2008
Accepted: 5 February 2008
Published online: 28 March 2008
In this work, we study the optical interband transitions of InP on silicon (InP/Si) and on porous silicon (InP/PSi) substrates grown by molecular beam epitaxy (MBE). Spectroscopic ellipsometry for photon energies from 2 to 5 eV is used to determine the InP/Si and InP/PSi complex refractive index and thickness. Bruggeman effective medium approximation (EMA) associated to the Cauchy model are used to model the experimental ellipsometric data. We have found that the E1 and E1 + transition energies of InP/Si and InP/PSi shift to low energies compared to bulk InP. This effect is interpreted as a result of the strain relaxation of the InP layers grown respectively on Si and porous Si substrates.
PACS: 78.55.Cr – III-V semiconductors / 95.55.Qf – Photometric, polarimetric, and spectroscopic instrumentation / 68.35.Gy – Mechanical properties; surface strains
© EDP Sciences, 2008
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