Eur. Phys. J. Appl. Phys.
Volume 36, Number 2, November 2006
|Page(s)||111 - 117|
|Section||Surfaces, Interfaces and Films|
|Published online||11 October 2006|
Study on preferred crystal orientations of Mg-Zr-O composite protective layer in AC-PDP
Advanced Display Research Center, Institute of Industrial Science, The
University of Tokyo, Japan
2 Key laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, P.R. China
3 Key laboratory of Opto-Electronic Technology and Intelligent Control of Ministry of Education, Lanzhou Jiaotong University, P.R. China
Corresponding author: firstname.lastname@example.org
Revised: 10 May 2006
Accepted: 1 August 2006
Published online: 11 October 2006
In order to study the preferred crystal orientations of Mg-Zr-O composite protective layers in PDP, Mg-Zr-O composite protective layers were deposited by Electron-beam Evaporator using (MgO+ZrO2) powder mixture as evaporation source material. X-ray diffractometer (XRD) was used to determine preferred crystal orientations of Mg-Zr-O composite protective layers, surface morphologies of films were analyzed by FESEM and voltage characteristics were examined in a testing macroscopic discharge cell of AC-PDP. On the basis of experimental analysis, the influence of oxide addition and deposition conditions on preferred orientations of Mg-Zr-O composite protective layers were investigated. The results showed that the preferred orientations of Mg-Zr-O films were determined by lattice distortion of MgO crystal. The deposition conditions have great effects on the preferred orientations of Mg-Zr-O films. The preferred orientations affect voltage characteristics through affecting surface morphology of Mg-Zr-O films. A small amount of Zr solution in MgO can decrease firing voltage compared with using pure MgO film. Firing voltage is closely related with the [ ZrO2/(MgO+ZrO2)] ratio of evaporation source materials.
PACS: 68.55.Jk – Structure and morphology; thickness; crystalline orientation and texture / 68.55.Ln – Defects and impurities: doping, implantation, distribution, concentration, etc. / 81.15.Jj – Ion and electron beam-assisted deposition; ion plating
© EDP Sciences, 2006
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