Issue |
Eur. Phys. J. Appl. Phys.
Volume 34, Number 1, April 2006
|
|
---|---|---|
Page(s) | 71 - 71 | |
Section | Erratum | |
DOI | https://doi.org/10.1051/epjap:2006041 | |
Published online | 15 April 2006 |
https://doi.org/10.1051/epjap:2006041
All the physical and electrical parameters of the MOS transistor on a single graph (QΨ)
Département de Physique, Université Joseph Fourier, Grenoble, France
Laboratoire de Technologie de la Microélectronique,
17 avenue des Martyrs, 38054 Grenoble 9, France
Corresponding author: gilbert.belledonne@wanadoo.fr
Received:
11
March
2006
Published online: 15 April 2006
This article has no abstract.
© EDP Sciences, 2006
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