This article has an erratum: [erratum]
Eur. Phys. J. Appl. Phys.
Volume 32, Number 3, December 2005
|Page(s)||155 - 158|
|Section||Physics of Organic Materials and Devices|
|Published online||14 December 2005|
All the physical and electrical parameters of the MOS transistor on a single graph (QΨ)*
Département de Physique, Université Joseph Fourier, Grenoble, France
Laboratoire de Technologie de la Microélectronique,
17 avenue des Martyrs, 38054 Grenoble 9, France
Corresponding author: firstname.lastname@example.org
Accepted: 25 October 2005
Published online: 14 December 2005
A single and simple graph is proposed, to visualize the impact of all the numerous parameters playing a role in the metal-oxide-semiconductor (MOS) transistor characteristics: doping and permittivity of the semiconductor, thickness, permittivity and charge of the oxide, temperature, and finally gate, drain and substrate voltages. In addition, MOS structure and capacitance properties are presented.
PACS: 85.30.Tv – Field effect devices / 85.40.-e – Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology / 85.30.De – Semiconductor-device characterization, design, and modeling / 73.40.Qv – Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
This paper is a resume of a lesson (in French) for Electrical Engineering Master's students. The complete text can be found at: http://perso.wanadoo.fr/physique.belledonne/. A simplified version of this paper has been published at: 8es journées pédagogiques, CNFM, 2004 dec. 1, edited by O. Bonnaud, H. Lhermite, CCMO, Université de Rennes 1, France.
© EDP Sciences, 2005
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