Eur. Phys. J. Appl. Phys.
Volume 33, Number 1, January 2006
|Page(s)||1 - 4|
|Section||Semiconductors and Devices|
|Published online||18 January 2006|
Cleaning InSb wafers for manufacturing InSb detectors
Semiconductor Component Industry, PO Box 19575/199, Tehran, Iran
Revised: 24 September 2005
Accepted: 29 September 2005
Published online: 18 January 2006
Three chemical cleaning procedures for InSb(111) wafers were studied. X-ray photoelectric spectroscopy, and scan electron microscope were used to assess their credibility for use in manufacturing the InSb detectors. It is shown, a suitable thermal treatment can remove In oxide and Sb oxide and therefore, all procedures approach to similar results from this point of view. But undulation and peel-like features has been observed on InSb(111) surface etched by all etchants except a modified CP4A etchant (HNO3:CH3COOH:HF:H2O at 2:1:1:10). Also control the etch rate and etching process can be done better in CP4A than the others. The XPS results show different spectra for SbOx and InOx when, InSb(111) is compared with InSb(100) and it means that, for different crystal orientation and different etchant there are different cleaning method for removing SbOx and InOx. Finally the effect of etchants on the performance of InSb detectors was shown.
PACS: 81.05.Ea – III-V semiconductors
© EDP Sciences, 2006
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