| Issue |
Eur. Phys. J. Appl. Phys.
Volume 33, Number 1, January 2006
|
|
|---|---|---|
| Page(s) | 5 - 7 | |
| Section | Physics of Organic Materials and Devices | |
| DOI | https://doi.org/10.1051/epjap:2006002 | |
| Published online | 18 January 2006 | |
https://doi.org/10.1051/epjap:2006002
Solar blind AlGaN photodetectors with a very high spectral selectivity
1
CRHEA, CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France
2
THALES Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex,
France
3
Institute for Microstructural sciences, National Research Council, Ottawa
K1A 0R6, Ontario, Canada
Corresponding author: jyd@crhea.cnrs.fr
Received:
23
March
2005
Revised:
19
August
2005
Accepted:
29
September
2005
Published online:
18
January
2006
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 × 104, and better than 5 × 104, measured between 280 and 320 nm, are achieved in Metal Semiconductor Metal detectors and Schottky diodes respectively. The whole detector process is fully compatible with low cost array fabrication.
PACS: 85.60.Gz – Photodetectors (including infrared and CCD detectors) / 78.20.-e – Optical properties of bulk materials and thin films / 73.40.Sx – Metal-semiconductor-metal structures
© EDP Sciences, 2006
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