Eur. Phys. J. Appl. Phys.
Volume 31, Number 1, July 2005
|Page(s)||63 - 69|
|Section||Instrumentation and Metrology|
|Published online||27 April 2005|
Metrological applications of Mueller polarimetry in conical diffraction for overlay characterization in microelectronics
Laboratoire de Physique des Interfaces et des Couches Minces, UMR 7647
(CNRS), École Polytechnique, 91128 Palaiseau Cedex, France
Corresponding author: firstname.lastname@example.org
Revised: 30 December 2004
Accepted: 27 January 2005
Published online: 27 April 2005
We present a first theoretical evaluation of a new optical technique for diffraction grating metrology. While well-known spectroscopic ellipsometry (SE) is based on classical ellipsometric spectra taken in the usual planar diffraction geometry, we propose to use spectrally resolved full Mueller matrices of the gratings measured in the most general geometry of conical diffraction. We simulate the case of two superimposed one-dimensional (1D) gratings with an overlay defect, i.e. a relative shift of the two gratings with respect to each other. We show that the proposed new technique is sensitive to both the magnitude and sign of the shift, and thus it should be more efficient than usual SE for overlay characterization in real cases.
PACS: 42.25.Fx – Diffraction and scattering / 85.40.Hp – Lithography, masks and pattern transfer / 95.75.Hi – Polarimetry
© EDP Sciences, 2005
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.