Eur. Phys. J. Appl. Phys.
Volume 30, Number 1, April 2005
|Page(s)||3 - 6|
|Section||Semiconductors and Devices|
|Published online||28 January 2005|
Selective emitters diffusion using an air belt furnace
Laboratoire des Cellules Photovoltaïques, Unité de Développement de la Technologie du Silicium, 2 boulevard Frantz Fanon, BP 399, Alger-Gare, Algeria
Corresponding author: firstname.lastname@example.org
Revised: 9 October 2004
Accepted: 22 October 2004
Published online: 28 January 2005
A new and simple process for the selective emitter realization was developed on multicrystalline silicon wafers. This material is in competition with single-crystal silicon since it is able to lead to similar performances with a reduction in the cost of solar cell realization. This work is centred on the study of emitter area of a photovoltaic cell and the possibilities to obtain a selective emitter in only one step while avoiding the use of chemicals. This would make substantial economies on the rejections treatment which became a capital environmental factor. A structure with selective emitter consists of a heavy doping under the metallic contacts, leaving weak the surface concentration between the grid lines. This allows a good surface passivation while keeping a good contact resistance for screen printed lines. The advantages of such a structure could be observed by quantum efficiency measurements yield where the benefit appears in the UV-VIS range of the solar spectrum.
PACS: 81.70.Jb – Chemical composition analysis, chemical depth and dopant profiling / 84.60.Jt – Photoelectric conversion: solar cells and arrays
© EDP Sciences, 2005
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