Eur. Phys. J. Appl. Phys.
Volume 52, Number 1, October 2010
|Number of page(s)||10|
|Section||Physics of Energy Generation Transfer, Conversion and Storage|
|Published online||22 September 2010|
Dry plasma processing for industrial crystalline silicon solar cell production
Fraunhofer Institute for Solar Energy Systems, Dept. PTQ, Heidenhofstr. 2, 79110 Freiburg, Germany
Corresponding author: firstname.lastname@example.org
Revised: 25 May 2010
Accepted: 23 June 2010
Published online: 22 September 2010
This paper gives an overview on the standard crystalline silicon solar cell manufacturing processes typically applied in industry. Main focus has been put on plasma processes which can replace existing, mainly wet chemical processes within the standard process flow. Finally, additional plasma processes are presented which are suited for higher-efficient solar cells, i.e. for the “passivated emitter and rear cell” concept (PERC) or the “heterojunction with intrinsic thin layer” approach (HIT). Plasma processes for the deposition of thin dielectric or semiconducting layers for surface passivation, emitter deposition or anti-reflective coating purposes are presented. Plasma etching processes for the removal of phosphorus silicate glass or parasitic emitters, for wafer cleaning and masked and mask-free surface texturisation are discussed.
© EDP Sciences, 2010
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