Eur. Phys. J. Appl. Phys.
Volume 28, Number 1, October 2004
|Page(s)||79 - 81|
|Section||Magnetism, Superconductivity and Related Devices|
|Published online||25 June 2004|
A high magnetic field sensor based on magnetic tunnel junctions
Laboratoire de Physique des Matériaux, UMR CNRS 7556, BP 239,
54506 Vandœuvre-lès-Nancy Cedex, France
2 Laboratoire de Physique des Matériaux, BP 523, 23000 Béni-Mellal, Morocco
Corresponding author: email@example.com
Revised: 10 March 2004
Accepted: 1 April 2004
Published online: 25 June 2004
We used an in-plane magnetized electrode and a perpendicular to film plane magnetized multilayer electrode in a magnetic tunnel junction to generate the active part of a magnetic field sensor able to measure large fields. When the applied field is normal to the junction surface, the magnetization of the multilayer electrode is fixed while the moment of the in-plane magnetized electrode rotates towards the applied field. This generates a linear variation of tunnel junction resistance with the applied field. The use of tunnel junctions with all their known advantages makes this structure attractive for measuring large magnetic fields, of up to several kG.
PACS: 85.75.Ss – Magnetic field sensors using spin polarized transport
© EDP Sciences, 2004
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