| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 349 - 351 | |
| Section | Electron beam methods | |
| DOI | https://doi.org/10.1051/epjap:2004149 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004149
Anomalous electrical properties of dislocation slip plane in Si
Institute of Microelectronics Technology, Russia Academy of
Sciences, 142432 Chernogolovka, Moscow District, Russia
Corresponding author: eremenko@ipmt-hpm.ac.ru
Received:
9
July
2003
Accepted:
28
January
2004
Published online: 15 July 2004
The anomalous bright contrast in the specimens containing dense dislocation slip planes, swept by moving dislocations was analysed. It is shown that the bright EBIC contrast outside the Schottky barrier is related to electrical activity of the extended defects generated in the slip plane by moving dislocations and thus, the slip plane acts as extended barrier separating excess carriers.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 61.72.Lk – Linear defects: dislocations, disclinations
© EDP Sciences, 2004
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