Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||403 - 406|
|Published online||15 July 2004|
Influence of long-term defect diffusion on HgCdTe electronic structure
Institute of Physics, University of Rzeszów, 16A2 Rejtana Str., 35-310
2 Institute of Physics, Jagiellonian University, 4 Reymonta Str., 30-059 Kraków, Poland
Corresponding author: firstname.lastname@example.org
Accepted: 18 December 2003
Published online: 15 July 2004
The long-term diffusion processes of defects in HgxCdTe mixed crystals were investigated. Measurements of reflectivity and surface characterisation by means of scanning electron microscopy (SEM) were performed for samples with x = 0.4 and x = 0.62. The experiments were repeated after wet chemical etching. Optical results were compared with the reflectivity spectra obtained 20 years ago using the same samples of investigated material. We discuss the observed large changes in the optical spectra on the basis of comparative analysis and SEM results.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 68.35.Dv – Composition, segregation; defects and impurities / 81.70.Fy – Nondestructive testing: optical methods
© EDP Sciences, 2004
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