| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 403 - 406 | |
| Section | Multi-techniques investigations | |
| DOI | https://doi.org/10.1051/epjap:2004077 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004077
Influence of long-term defect diffusion on HgCdTe electronic structure
1
Institute of Physics, University of Rzeszów, 16A2 Rejtana Str., 35-310
Rzeszów, Poland
2
Institute of Physics, Jagiellonian University, 4 Reymonta Str., 30-059
Kraków, Poland
Corresponding author: pociask@univ.rzeszow.pl
Received:
17
July
2003
Accepted:
18
December
2003
Published online: 15 July 2004
The long-term diffusion processes of defects in HgxCd
Te mixed
crystals were investigated. Measurements of reflectivity and surface
characterisation by
means of scanning electron microscopy (SEM) were performed for samples with
x = 0.4 and x = 0.62. The experiments were repeated after wet chemical
etching. Optical results were compared with the reflectivity spectra obtained
20 years ago using the same samples of investigated material.
We discuss the observed large changes in the optical spectra on the basis
of comparative analysis and SEM results.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 68.35.Dv – Composition, segregation; defects and impurities / 81.70.Fy – Nondestructive testing: optical methods
© EDP Sciences, 2004
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