Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||483 - 485|
|Section||Electronic properties through contactless characterisation|
|Published online||15 July 2004|
FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps
Lab. TECSEN UMR 6122, University of Aix-Marseille III - Faculté
des Sciences et Techniques 231, 13397 Marseille Cedex 20, France
Corresponding author: firstname.lastname@example.org
Accepted: 15 December 2003
Published online: 15 July 2004
The kinetics of “metal-acceptor” pairing in boron-doped multicrystalline samples are investigated by means of contactless lifetime measurement. The case of FeB and CrB pairs is discussed and the influence of extended defect is evidenced for FeB. It is found that the reassociation of the “metal-acceptor” pairs is fast immediately after the dissociation and then slows down for several days. The results allow the identification of mixed contamination by Cr and Fe.
PACS: 61.72.-y – Defects and impurities in crystals; microstructure / 61.72.Ss – Impurity concentration, distribution, and gradients
© EDP Sciences, 2004
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