Eur. Phys. J. Appl. Phys.
Volume 26, Number 3, June 2004
14th International Colloquium on Plasma Processes (CIP 2003)
|Page(s)||187 - 192|
|Section||Plasma, Discharges and Processes|
|Published online||03 May 2004|
A study of growth mechanism of microcrystalline thin silicon films deposited at low temperature by SiF4-H2-He PECVD
Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM
Unit, Department of Chemistry, University of Bari, via Orabona 4, 70126 Bari, Italy
Corresponding author: email@example.com
Revised: 2 March 2004
Accepted: 12 March 2004
Published online: 3 May 2004
Fully microcrystalline silicon, μc-Si, thin films (<100 nm) have been deposited at low temperature (60 °C) on Corning glass and plastic flexible polyimide substrates by plasma enhanced chemical vapor deposition (PECVD) using SiF4-H2-He. The effect of deposition temperature on the structure, i.e., crystallinity and density, of μc-Si films is investigated by spectroscopic ellipsometry in the 1.5−5.5 eV energy range. Modeling of spectroscopic ellipsometry data is used for highlighting crystallinity of the substrate/film interface, i.e., the absence of any amorphous incubation layer. It is found that film crystallinity does not depend on film thickness, and it increases with the decrease of deposition temperature. The temperature dependence is explained on the basis of a like-Arrhenius kinetic analysis of the etching process by atomic fluorine and hydrogen of both μc-Si and a-Si phases.
PACS: 68.55.Jk – Structure and morphology; thickness; crystalline orientation and texture / 81.15.Gh – Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.) / 81.70.Fy – Nondestructive testing: optical methods
© EDP Sciences, 2004
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