Eur. Phys. J. AP
Volume 21, Number 3, March 2003
|Page(s)||179 - 185|
|Section||Surfaces, Interfaces and Films|
|Published online||27 February 2003|
An X-ray diffraction and Mössbauer study of interdiffusion phenomena at the interface between Fe and In0.5Ga0.5As (001)
Laboratoire de Métallurgie Physique, UMR 6630 CNRS-Université de Poitiers, bâtiment
SP2MI, Téléport 2, boulevard Marie et Pierre Curie, BP 30179, 86962
Futuroscope-Chasseneuil Cedex, France
2 Groupe de Physique des Matériaux, UMR 6634 CNRS-Université de Rouen, Faculté des Sciences et des Techniques de Rouen, place Emile Blondel, 76821 Mont-Saint-Aignan Cedex, France
Corresponding author: email@example.com
Revised: 22 October 2002
Accepted: 14 November 2002
Published online: 27 February 2003
Polycrystalline iron thin films on ion-etched monocrystalline In0.5Ga0.5As/InP (001) substrates were prepared using ion-beam sputtering deposition. The interface reaction was characterised by X-ray diffraction and conversion electron Mössbauer spectroscopy experiments, after annealing in vacuum for 1 h at temperatures between 350 and 450 °C. Interdiffusion phenomena mainly result in the formation of five new phases, namely metallic-In, InAs, Fe2As, Fe2InxAs () and Fe3GaAsx (), in agreement with the predictions of the phase diagrams. InAs results from the decomposition of the semiconductor substrate and remains (001)-textured. The iron-arsenide grains grow into the substrate below the Fe/In0.5Ga0.5As interface. The In precipitates reach ~40 nm in size after 1 h annealing at 450 °C, while the Fe3GaAsx phase appears at 400–450 °C with an either textured or disordered structure. Finally, the overall activation energy for the thermal reaction is calculated to be 1.5 eV in the latter temperature range.
PACS: 61.10.-i – X-ray diffraction and scattering / 68.35.-p – Solid surfaces and solid-solid interfaces: Structure and energetics / 76.80.+y – Mössbauer effect; other γ-ray spectroscopy
© EDP Sciences, 2003
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