Issue |
Eur. Phys. J. AP
Volume 21, Number 3, March 2003
|
|
---|---|---|
Page(s) | 187 - 193 | |
Section | Surfaces, Interfaces and Films | |
DOI | https://doi.org/10.1051/epjap:2003003 | |
Published online | 27 February 2003 |
https://doi.org/10.1051/epjap:2003003
Structural and transport properties of evaporated iron phthalocyanine (FePc) thin films
Faculty of Education, Ain Shams University, Roxy, Cairo, 11757, Egypt
Corresponding author: mahmoudelnahass@masrawy.com
Received:
13
November
2001
Revised:
2
April
2002
Accepted:
22
November
2002
Published online:
27
February
2003
The structural and transport properties of thin FePc films of
various thickness deposited onto glass substrates have been
studied at several temperatures. The structural studies show that
the films belong to monoclinic system of β-phase. This
structure is confirmed by infrared absorption analysis. The dark
electrical resistivity was found to decrease with increasing the
film thickness. Graphical representation of as a function of
reciprocal temperature yields two distinct linear parts indicating
in turn the existence of two activation energies
and
.
Measurement of the thermoelectric power showed that FePc thin
films behave as p-type semiconductor over the temperature
range
K. Analysis of thermoelectric power connected
with the resistivity results reveals some essential parameters
such as: hole mobility
m2 V-1 s-1, hole concentration
m-3 and the ratio
. Capacitance-voltage
data confirm that the Au/FePc interface does not form a Schottky
barrier and measurements of the dependence of capacitance on
film thickness indicate that the relative permittivity of the films
is approximately 3.7. Room temperature current density-voltage
characteristics showed ohmic conduction in the lower voltage
range and space-charge-limited – conductivity (SCLC) in the
relatively high voltage. The SCLC controlled by an exponential
distribution of traps above the valence band edge. The
temperature dependence of current density in accordance with
the theory for the exponential trap distributions yielded some
essential parameters such as: the hole mobility, the relative
permittivity, the trap concentration, the characteristic
temperature and the trap density.
PACS: 73.63.-b – Electronic transport in nanoscale materials and structures
© EDP Sciences, 2003
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