Eur. Phys. J. AP
Volume 19, Number 1, July 2002
|Page(s)||29 - 37|
|Section||Laser, Optics, Optoelectronics and Nanophotonics|
|Published online||28 June 2002|
X-valley influence on hot free electron absorption and optical nonlinearities at 10.6 µm in highly doped n-GaAs
Institute of Radio Engineering and Electronics of RAS,
Vvedensky Square 1, 141120 Fryazino (Moscow reg.), Russia
2 Vrije Universiteit Brussel, Lab for Micro- and Optoelectronics, Electronics Department, Pleinlaan 2, 1050 Brussels, Belgium
Corresponding author: firstname.lastname@example.org
Revised: 21 February 2002
Accepted: 11 March 2002
Published online: 28 June 2002
A theoretical overview is given about the influence of the presence of the X-valley in highly doped n-GaAs on hot free-electron absorption and optical nonlinearities at 10.6 μm wavelength. The implications of the extension of the quantum-mechanical model from two to three valleys are discussed. For electron temperatures above 600 K the X-valley presence starts to be observed. We reveal that it is difficult to trace the individual contributions of different X-electron related inter- and intravalley absorption and relaxation phenomena and therefore we suggest to introduce an effective X-valley related deformation potential which is a weighted combination of all the X-valley contributions. We discuss how nonlinear optical experiments can be conducted to determine the LL-intervalley and this effective X-valley deformation potential.
PACS: 42.65.-k – Nonlinear optics / 42.70.Nq – Other nonlinear optical materials; photorefractive and semiconductor materials / 72.10.-d – Theory of electronic transport; scattering mechanisms
© EDP Sciences, 2002
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