Eur. Phys. J. Appl. Phys.
Volume 37, Number 1, January 2007
|Page(s)||15 - 18|
|Section||Semiconductors and Related Materials|
|Published online||26 January 2007|
Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers
Groupe d'Étude des Semiconducteurs – CNRS – Université Montpellier II.
CC074, 34095 Montpellier Cedex 5, France
2 School of Electric and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
Corresponding author: firstname.lastname@example.org
Revised: 19 September 2006
Accepted: 13 October 2006
Published online: 26 January 2007
We report continuous wave and time resolved photoluminescence studies of self-assembled InP quantum dots grown by metalorganic chemical vapor deposition. The quantum dots are embedded into indirect band-gap In0.5Al0.5P layers or In0.5Al0.3Ga0.2P layers with a conduction band line-up close to the direct-to-indirect crossover. As revealed by photoluminescence spectra, efficient interdiffusion of species from the barrier layers produces (Al,In)P or (Al,Ga,In)P-dots. This interdiffusion creates potential barriers that are repulsive for electrons of X valleys around the QDs. Both samples show a fast exponential decay component with a time constant between 0.5 and 0.7 ns. In addition, the sample with indirect band gap matrix shows a slow non-exponential time-decay, which is still visible after more than 100 µs. The fast component is attributed to direct recombination of electron-hole pairs in the dots whilst the slow component, which follows a power law t−0.75 results from recombination of holes in the dots and electrons in metastable states around the dots.
PACS: 78.67.Hc – Quantum dots / 78.47.+p – Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter / 78.55.Cr – III-V semiconductors
© EDP Sciences, 2007
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