Eur. Phys. J. AP
Volume 18, Number 3, June 2002
|Page(s)||155 - 162|
|Section||Surfaces, Interfaces and Films|
|Published online||06 June 2002|
Comparison of the results of analytical and numerical model calculations of electron backscattering from supported films
Centro per la Ricerca Scientifica e Tecnologica and
Istituto Nazionale per la Fisica della Materia, 38050 Povo, Trento, Italy
Corresponding author: email@example.com
Revised: 27 November 2001
Accepted: 12 March 2002
Published online: 6 June 2002
When electron beams are directed against solid targets (unsupported thin film, bulk or surface film) some particles come back and emerge from the surface. These particles are not reflected without dissipation of energy because of their penetration below the surface and the resulting loss of small amounts of energy by ionizations, electrons excitations, plasmon emissions and so on. In this paper the fractions of electrons backscattered from surface films with various thicknesses deposited on different substrates, calculated by using both an analytical approximation (Multiple Reflection Method) and a numerical approach (Monte Carlo) are presented. The results of the two approaches are compared. The analytical method results are also compared with experimental data concerning surface films and good agreement is found between theory and experiment. The comparison allows us to conclude that the proposed analytical method, keeping in mind the underlying approximations, represents a useful and informative approach.
PACS: 72.20.Dp – General theory, scattering mechanisms / 79.20.-m – Impact phenomena
© EDP Sciences, 2002
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.