Issue |
Eur. Phys. J. AP
Volume 17, Number 2, February 2002
|
|
---|---|---|
Page(s) | 87 - 97 | |
Section | Semiconductors and Devices | |
DOI | https://doi.org/10.1051/epjap:2002001 | |
Published online | 15 February 2002 |
https://doi.org/10.1051/epjap:2002001
Yttrium implantation and addition element effects on high temperature oxidation behaviour of reference steels
Laboratoire Vellave d'Élaboration et d'Étude des Matériaux, Équipe Locale Université Blaise Pascal de Clermont-Ferrand II, Institut Universitaire de Technologie, Département de Chimie-Sciences des Matériaux, BP 219, 43006 Le Puy en Velay, France
Corresponding author: Caudron@iut.u-clermont1.fr
Received:
23
April
2001
Revised:
17
July
2001
Accepted:
31
October
2001
Published online: 15 February 2002
Yttrium implanted and unimplanted various reference steels were oxidized at 700 °C, under controlled atmosphere (oxygen partial pressure: 0.04 Pa), for 24 h to observe the yttrium implantation and the addition element effects on steel high temperature oxidation behaviours. Yttrium implantation effects on reference steels were characterized using analytical and structural techniques such as Rutherford Backscattering Spectrometry (RBS), Reflection High Energy Electron Diffraction (RHEED), X-ray Diffraction (XRD) and Glancing Angle X-ray Diffraction (GAXRD). Yttrium implanted and unimplanted reference steel oxidation behaviours were observed by thermogravimetry and in situ high temperature X-ray diffraction. Our results clearly show that yttrium implantation and high temperature oxidation induced the formation of several yttrium mixed oxides which closely depend on the reference steel addition elements. Moreover, these yttrium mixed oxides seem to be responsible for the improved reference steel oxidation resistance at high temperature.
PACS: 68.35.Bs – Structure of clean surfaces (reconstruction) / 81.05.Bx – Metals, semimetals, and alloys / 85.40.Ry – Impurity doping, diffusion and ion implantation technology
© EDP Sciences, 2002
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