| Issue |
Eur. Phys. J. AP
Volume 15, Number 3, September 2001
|
|
|---|---|---|
| Page(s) | 153 - 165 | |
| Section | Organic Materials and Devices | |
| DOI | https://doi.org/10.1051/epjap:2001177 | |
| Published online | 15 September 2001 | |
https://doi.org/10.1051/epjap:2001177
Orientation control of rhomboedral PZT thin films on Pt/Ti/SiO2/Si substrates
Laboratoire CRISMAT/ISMRA et Université de Caen (CNRS UMR 6508), 6 boulevard du Maréchal
Juin, 14050 Caen Cedex, France
Corresponding author: bertrand.vilquin@ismra.fr
Received:
19
February
2001
Revised:
4
April
2001
Accepted:
1
June
2001
Published online: 15 September 2001
Highly (111)- and (001)-oriented rhomboedral PZT thin films have been grown at 500 °C on
platinized silicon substrates by in situ RF magnetron sputtering. Crystallization of the perovskite
phase was possible provided that a thin TiOx buffer layer was deposited prior to the PZT. Control of
PZT films orientation is demonstrated by changing the 
ratio in the plasma gas
during the TiOx sputtering and its consequences on electrical properties of the ferroelectric samples
are presented. The structural properties of the TiOx buffer layer were studied by means of
transmission electronic microscopy in order to understand the relation between the TiOx seeding and
the orientation control of the PZT film.
PACS: 81.15.Cd – Deposition by sputtering / 77.84.-s – Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials / 68.37.Lp – Transmission electron microscopy (TEM) (including STEM, HRTEM, etc.)
© EDP Sciences, 2001
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