Eur. Phys. J. AP
Volume 13, Number 3, March 2001
|Page(s)||171 - 176|
|Section||Organic Materials and Devices|
|Published online||15 March 2001|
Simulation of surface morphology and defects in heteroepitaxied thin films
LPMC, Département de Physique, Faculté des Sciences, Université Chouaïb Doukkali, BP 20, El jadida, Morocco
2 LPC, Département de Physique, Faculté des Sciences et Techniques, BP 523, Béni Mellal, Morocco
3 Département de Physique, Faculté des Sciences, Université ibn Tofl, Kénitra, Morocco
4 Laboratoire de Physique des Solides, Université Paul Sabatier, 118 route de Narbonne, 31062 Toulouse Cedex, France
5 LAAS, CNRS, 7 avenue Colonel Roche, 31077 Toulouse Cedex, France
Corresponding author: firstname.lastname@example.org
Revised: 17 November 2000
Accepted: 17 November 2000
Published online: 15 March 2001
We have performed atomic scale simulations of heteroepitaxial growth of thin films using the valence force field approximation and Monte Carlo techniques. The case of CdTe/(001)GaAs is considered. Our simulations indicate valley formation presenting (111) facets with unstable bottoms in the early stages of the growth. This roughening is a source of dislocation, as it appears to relax the elastic energy of the deposited layers by formation of V-grooves. We have used a calculated RHEED as an in situ control of deposited layers. Finally, we present the influence of an imperfect surface in the morphology of the deposited films.
PACS: 68.35.Ct – Interface structure and roughness / 68.35.Fx – Diffusion, interface formation / 61.72.Bb – Theories and models of crystal defects
© EDP Sciences, 2001
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.