Eur. Phys. J. AP
Volume 11, Number 3, September 2000
|Page(s)||227 - 229|
|Published online||15 September 2000|
Noise measurements on single electron transistors using bias switching read-out
Low Temperature Laboratory, Helsinki University of
Technology, PO Box 2200, 02015 Espoo HUT, Finland
2 VTT Automation, Measurement Technology, PO Box 1304, 02044 VTT, Finland
Corresponding author: email@example.com
Revised: 13 August 2000
Accepted: 13 August 2000
Published online: 15 September 2000
We present a simple bias reversal technique for single electron transistors (SET) to remove fluctuations of tunneling resistance from the read-out signal at low frequencies. The gain of the device is kept constant under bias reversal by using asymmetric junction capacitances. In our Al/AlOx/Al devices with 1.2 μm island size and 100 × 100 nm2 tunnel junctions, the noise at 10 Hz is , independent of the bias modulation.
PACS: 85.30.Wx – Single electron devices / 73.23.Hk – Coulomb blockade; single-electron tunneling
© EDP Sciences, 2000
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