| Issue |
Eur. Phys. J. AP
Volume 11, Number 2, August 2000
|
|
|---|---|---|
| Page(s) | 103 - 106 | |
| DOI | https://doi.org/10.1051/epjap:2000150 | |
| Published online | 15 August 2000 | |
https://doi.org/10.1051/epjap:2000150
Elaboration and characterization of PNZT thin films deposited on silicon by RF cathodic sputtering*
Laboratoire des Matériaux Avancés Céramiques, Université de Valenciennes et du Hainaut Cambrésis (UVHC),
CRITT Céramiques Fines, Z.I. du Champ de l'Abbesse, 59600 Maubeuge, France
Corresponding author: thaccart@univ-valenciennes.fr
Received:
6
April
2000
Accepted:
27
June
2000
Published online: 15 August 2000
Pb(Zr,Ti)O3 (PZT) and Pb(Zr,Ti,Nb)O3 (PNZT) thin films have been grown on platinized silicon substrates
by RF magnetron sputtering followed by a post-annealing treatment. The niobium, Nb, concentration varied from 1 to
7 at.% by increment of 1 at.% The effects of the Nb introduction on the PZT electrical
properties, i.e., dielectric and ferroelectric ones have been investigated. We have
found that the relative dielectric constant 
is very sensitive to the
Nb introduction; reaches 1100 for a PNZT film doped at 2 at.% in
comparison to 820 for a PZT film. The ferroelectric properties are also dependent of the
doping level; in particular the remnant polarization reaches its maximum value
(
C/cm2) for a 2 at.% Nb doped PZT film.
PACS: 81.15.Cd – Deposition by sputtering / 77.84.-s – Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
© EDP Sciences, 2000
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