Eur. Phys. J. AP
Volume 11, Number 2, August 2000
|Page(s)||103 - 106|
|Published online||15 August 2000|
Elaboration and characterization of PNZT thin films deposited on silicon by RF cathodic sputtering*
Laboratoire des Matériaux Avancés Céramiques, Université de Valenciennes et du Hainaut Cambrésis (UVHC),
CRITT Céramiques Fines, Z.I. du Champ de l'Abbesse, 59600 Maubeuge, France
Corresponding author: firstname.lastname@example.org
Accepted: 27 June 2000
Published online: 15 August 2000
Pb(Zr,Ti)O3 (PZT) and Pb(Zr,Ti,Nb)O3 (PNZT) thin films have been grown on platinized silicon substrates by RF magnetron sputtering followed by a post-annealing treatment. The niobium, Nb, concentration varied from 1 to 7 at.% by increment of 1 at.% The effects of the Nb introduction on the PZT electrical properties, i.e., dielectric and ferroelectric ones have been investigated. We have found that the relative dielectric constant is very sensitive to the Nb introduction; reaches 1100 for a PNZT film doped at 2 at.% in comparison to 820 for a PZT film. The ferroelectric properties are also dependent of the doping level; in particular the remnant polarization reaches its maximum value (C/cm2) for a 2 at.% Nb doped PZT film.
PACS: 81.15.Cd – Deposition by sputtering / 77.84.-s – Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
© EDP Sciences, 2000
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