| Issue |
Eur. Phys. J. AP
Volume 9, Number 3, March 2000
|
|
|---|---|---|
| Page(s) | 181 - 185 | |
| DOI | https://doi.org/10.1051/epjap:2000103 | |
| Published online | 15 March 2000 | |
https://doi.org/10.1051/epjap:2000103
Selective growth and optical properties of sputtered BaTiO3 films
Laboratoire de Physique, Université de Bourgogne (UMR 5027 du CNRS),
bâtiment Mirande, B.P. 47870, 21078 Dijon Cedex, France
Corresponding author: maglione@u-bourgogne.fr
Received:
19
October
1998
Revised:
7
September
1999
Accepted:
7
September
1999
Published online: 15 March 2000
we report the growth of BaTiO3 thin films by standard Radio Frequency sputtering. Without any in situ or post annealing, these polycristalline films are oriented relative to the substrate even when it is amorphous. We show that this preferential orientation may be monitored using a DC Bias during the film growth. At room temperature, cubic films of (100) and (110) orientations have been achieved, on fused silica substrate. Some optical waveguiding properties of these films have been studied. The resulting film index is 2.26 and the optical step index at the substrate interface is sharp. This allows the use of standard RF sputtering techniques to monitor oriented BaTiO3 films for linear optical applications.
PACS: 07.60.-j – Optical instruments, equipment, and techniques / 42.82.Cr – Fabrication techniques; lithography, pattern transfer / 85.50.+k – Dielectric, ferroelectric, and piezoelectric devices
© EDP Sciences, 2000
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