| Issue |
Eur. Phys. J. AP
Volume 9, Number 1, January 2000
|
|
|---|---|---|
| Page(s) | 19 - 24 | |
| DOI | https://doi.org/10.1051/epjap:2000194 | |
| Published online | 15 January 2000 | |
https://doi.org/10.1051/epjap:2000194
Ce3+ luminescent centres in atomic layer epitaxy SrS thin film electroluminescent devices
1
Laboratoire d'Optique des Solides (UMR 7601 du CNRS), Université Pierre
et Marie Curie, Case n° 80, 4 place Jussieu,
75252 Paris, France
2
Institut de Chimie de la Matière Condensée de Bordeaux, CNRS, 33608 Pessac Cedex,
France
3
Planar Systems Inc., Olarinluoma 9, P.O. Box 46, FIN, 02201 Espoo, Finland
Corresponding author: pben@ccr.jussieu.fr
Received:
9
July
1999
Revised:
16
September
1999
Accepted:
5
October
1999
Published online: 15 January 2000
A luminescent study under selective photonic excitation has established the presence of three different kinds of Ce3+ centres in SrS atomic layer epitaxy thin films: one in a regular sulfur octahedral sites and two others in lower symmetry. These last sites shift the emission spectra towards the green. High thermal annealing up to 750 °C improves the crystallinity of the SrS:Ce layer by converting low symmetry Ce3+ sites in regular octahedral sites and decreasing the density of defects. These two effects lead to efficient PL layers with a good blue chromaticity.
PACS: 78.55.Et – II-VI semiconductors / 78.60.Fi – Electroluminescence
© EDP Sciences, 2000
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