Eur. Phys. J. AP
Volume 8, Number 1, October 1999
|Page(s)||19 - 24|
|Published online||15 October 1999|
The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
LEMI (UPRES EA 2654 du CNRS), IUT,
Université de Rouen, rue Lavoisier, 76821
2 LPM-INSA de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne, France
Revised: 27 November 1998
Accepted: 28 June 1999
Published online: 15 October 1999
This study reports on Be diffusion in InGaAsP layers grown by gas source molecular beam epitaxy. The experimental structures consisted of a 2000 Å Be-doped (3 × 109 cm−3) In0.73Ga0.27As0.58P0.42 layer sandwiched between two 5000 Å undoped In0.73Ga0.27As0.58P0.42 layers. The samples were subjected to rapid thermal annealing in the temperature range from 700 to 900 °C with time durations of 10 to 240 s. Secondary ion mass spectrometry was employed for a quantitative determination of the Be depth profiles. Concentration profiles of Be in InGaAsP have been simulated according to two kick-out models: the first model involving neutral Be interstitials and singly positively charged Ga, In self-interstitials, and the second model involving singly positively charged Be interstitials and doubly positively charged Ga, In self-interstitials. Comparison with experimental data shows that the first kick-out model gives a better description.
PACS: 66.30.Jt – Diffusion of impurities / 71.55.Eq – III-V semiconductors
© EDP Sciences, 1999
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