The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions

¹ LEMI (UPRES EA 2654 du CNRS), IUT, Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
² LPM-INSA de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne, France

Corresponding authors: Kaouther.Ketata@univ-rouen.fr serge.koumetz@univ-rouen.fr

Received: 27 July 1998
Revised: 27 November 1998
Accepted: 28 June 1999
Published online: 15 October 1999

Abstract

This study reports on Be diffusion in InGaAsP layers grown by gas source molecular beam epitaxy. The experimental structures consisted of a 2000 Å Be-doped (3 × 10⁹ cm⁻³) In_0.73Ga_0.27As_0.58P_0.42 layer sandwiched between two 5000 Å undoped In_0.73Ga_0.27As_0.58P_0.42 layers. The samples were subjected to rapid thermal annealing in the temperature range from 700 to 900 °C with time durations of 10 to 240 s. Secondary ion mass spectrometry was employed for a quantitative determination of the Be depth profiles. Concentration profiles of Be in InGaAsP have been simulated according to two kick-out models: the first model involving neutral Be interstitials and singly positively charged Ga, In self-interstitials, and the second model involving singly positively charged Be interstitials and doubly positively charged Ga, In self-interstitials. Comparison with experimental data shows that the first kick-out model gives a better description.