| Issue |
Eur. Phys. J. AP
Volume 5, Number 1, January 1999
|
|
|---|---|---|
| Page(s) | 1 - 2 | |
| DOI | https://doi.org/10.1051/epjap:1999106 | |
| Published online | 15 January 1999 | |
https://doi.org/10.1051/epjap:1999106
A special study on the sensitivity of electron mobility with respect to the tunnel oxide thickness for a floating gate electron-tunneling mosfet
C/Julio Palacios, 11, 9B, 28029 Madrid, Spain
Received:
25
June
1998
Revised:
22
October
1998
Accepted:
22
October
1998
Published online: 15 January 1999
A sensitivity factor for electron mobility with respect to the tunnel oxide thickness in a floating gate electron-tunneling MOSFET of n-channel is defined. To this end, a field-dependent mobility is assumed.
PACS: 85.30.-z – Semiconductor devices / 85.30.De – Semiconductor-device characterization, design, and modeling / 85.30.Mn – Junction breakdown and tunneling devices (including resonance tunneling devices)
© EDP Sciences, 1999
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