| Issue |
Eur. Phys. J. AP
Volume 4, Number 3, December 1998
|
|
|---|---|---|
| Page(s) | 269 - 273 | |
| DOI | https://doi.org/10.1051/epjap:1998270 | |
| Published online | 15 December 1998 | |
https://doi.org/10.1051/epjap:1998270
Incorporation modes of silicon in GaAs: Si grown by metalorganic vapor phase epitaxy
Laboratoire de Physique des Matériaux, Faculté des Sciences,
TN-5000 Monastir,
Tunisia
Received:
7
April
1998
Revised:
15
July
1998
Accepted:
14
September
1998
Published online: 15 December 1998
The incorporation of silicon from SiH4
in GaAs has been studied on a wide
range of growth conditions by atmospheric
pressure metalorganic vapor phase
epitaxy (AP-MOVPE). The highest
free carrier concentration exceeds
1 × 1019 cm−3. Compensation ratios appear
to be strongly dependent on the SiH4
partial pressure. The relatively high
compensation ratios essentially originate
from the amphoteric behaviour of silicon.
The temperature dependence of
silicon doping has been investigated in
the range 650 °C to 765 °C with various
silane partial pressures. The
activation energy of Si incorporation varies from
0 to 2.2 eV. The dependence of the free
electron concentration on the arsine
partial pressure (PAsH3) leads to the empirical relationship:
n = aPAsH3 + 
,
which describes the relationship between silicon doping
concentration and arsine partial pressure.
PACS: 61.72.Vv – Doping and impurity implantation in III-V and II-VI semiconductors / 73.61.Ey – III-V semiconductors / 81.15.Gh – Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
© EDP Sciences, 1998
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