Eur. Phys. J. AP
Volume 4, Number 2, November 1998
|Page(s)||227 - 233|
|Published online||15 November 1998|
Temperature measurements by optical pyrometry during the epitaxial growth of semiconductors
Laboratoire d'Analyse des Interfaces et de Nanophysique (LAIN) CNRS
Université Montpellier II, Place Eugène Bataillon
34095 Montpellier Cedex 5, France
Corresponding author: firstname.lastname@example.org
Revised: 24 June 1998
Accepted: 6 July 1998
Published online: 15 November 1998
The true and apparent temperature of samples during the deposition of III-V layers by molecular beam epitaxy changes as a result of the variation in spectral emissivity ϵ with layer thickness. Taking into account the infrared optical properties of these materials, we modelized the variations of the true sample temperature and the apparent temperature (as determined by pyrometric measurement) during the growth. We limited our study to deposits involving at least one absorbing material (at the pyrometer wavelength), for example GaSb, InAs or InSb. We showed that our simple model can agree reasonably with experiments in the 400−500 °C temperature range.
PACS: 78.20.e – Optical properties of bulk materials and thin films
© EDP Sciences, 1998
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