Eur. Phys. J. AP
Volume 2, Number 3, June 1998
|Page(s)||267 - 273|
|Published online||15 June 1998|
Characteristic features of an ionization system with semiconducting cathode
Physics Department, Faculty of Arts and Sciences, Gazi University,
06500 Teknikokullar, Ankara, Turkey
2 Physics Department, Middle East Technical University, 06531 Ankara, Turkey
Corresponding author: email@example.com
Revised: 7 October 1997
Accepted: 2 March 1998
Published online: 15 June 1998
The characteristic features of a dc discharge generated between parallel plate electrodes and especially the discharge stabilization by the GaAs semiconducting cathode in such a system are studied. The cathode was irradiated on the back-side with IR light in a particular wavelength range that was used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. The current-voltage and radiation-voltage characteristics of the gas discharge cell with a semiconducting cathode were obtained experimentally. An investigation of the effect of the voltage amplitude on the dynamics of transient processes in the plane semiconductor-discharge gap structure was made for explanation of the light intensity and current decay. Expressions are obtained for the photoelectric gain.
PACS: 52.80.-s – Electric discharges / 73.40.Sx – Metal-semiconductor-metal structures
© EDP Sciences, 1998
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