Eur. Phys. J. AP
Volume 2, Number 3, June 1998
|Page(s)||267 - 273|
|Published online||15 June 1998|
Characteristic features of an ionization system with semiconducting cathode
Physics Department, Faculty of Arts and Sciences, Gazi University,
06500 Teknikokullar, Ankara, Turkey
2 Physics Department, Middle East Technical University, 06531 Ankara, Turkey
Corresponding author: firstname.lastname@example.org
Revised: 7 October 1997
Accepted: 2 March 1998
Published online: 15 June 1998
The characteristic features of a dc discharge generated between parallel plate electrodes and especially the discharge stabilization by the GaAs semiconducting cathode in such a system are studied. The cathode was irradiated on the back-side with IR light in a particular wavelength range that was used to control the photoconductivity of the material. The semiconductor material was found to stabilize the discharge. The current-voltage and radiation-voltage characteristics of the gas discharge cell with a semiconducting cathode were obtained experimentally. An investigation of the effect of the voltage amplitude on the dynamics of transient processes in the plane semiconductor-discharge gap structure was made for explanation of the light intensity and current decay. Expressions are obtained for the photoelectric gain.
PACS: 52.80.-s – Electric discharges / 73.40.Sx – Metal-semiconductor-metal structures
© EDP Sciences, 1998
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.