Issue |
Eur. Phys. J. AP
Volume 2, Number 3, June 1998
|
|
---|---|---|
Page(s) | 275 - 279 | |
DOI | https://doi.org/10.1051/epjap:1998193 | |
Published online | 15 June 1998 |
https://doi.org/10.1051/epjap:1998193
Behaviour of current in gas discharge system between parallel-plane electrodes
1
Physics Department,
Faculty of Arts and Sciences, Gazi University,
06500 Teknikokullar, Ankara, Turkey
2
Physics Department, Faculty of Arts and Sciences,
Nide University,
51100 Nide, Turkey
Corresponding author: bala@quark.fef.gazi.edu.tr
Received:
18
March
1997
Revised:
20
October
1997
Accepted:
2
March
1998
Published online: 15 June 1998
The current-voltage characteristics of a gas discharge system in parallel-plane geometry are studied.
The gas discharge system with a photosensitive semiconductor cathode have been studied in a wide range of the gas
pressures p (21.3−1013 hPa), inter-electrode distances d (10μm−5mm), and conductivities of the semiconductor.
Gallium arsenide
has been used as the semiconducting cathode.
The cathode was irradiated on the
back-side with light in a particular
wavelength range that was used to control
the photoconductivity of the material.
The semiconductor material was found to "stabilize"
the discharge. When the current is increased above the stable
limit, breakdown or small current oscillations begin. The filamentation was primary due to the formation of a space
charge of positive ions in the discharge gap which changed the discharge from the Townsend to the glow type.
PACS: 52.40.-w – Plasma interactions / 73.40.Sx – Metal-semiconductor-metal structures
© EDP Sciences, 1998
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