| Issue |
Eur. Phys. J. AP
Volume 2, Number 2, May 1998
|
|
|---|---|---|
| Page(s) | 107 - 110 | |
| DOI | https://doi.org/10.1051/epjap:1998172 | |
| Published online | 15 May 1998 | |
https://doi.org/10.1051/epjap:1998172
Conductivity in porous silicon*
1
Laboratoire de Physique des Semiconducteurs, Département de Physique,
Faculté des Sciences de Monastir, 5000 Monastir, Tunisia
2
Groupe de Physique des Solides, Universités Paris 6 et Paris 7,
Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
Corresponding author: bourgoin@gps.jussieu.fr
Received:
4
February
1997
Revised:
16
October
1997
Accepted:
27
February
1998
Published online: 15 May 1998
Admittance spectroscopy has been performed on Al dots deposited on porous Silicon grown on p+ substrates. They exhibit d.c. current-voltage characteristics of a metal-insulator-semiconductor structure containing a large concentration of localized states in the insulator. The admittance is composed of a frequency (ω) independent conductance while the reactance varies as ωs with s = 1. This strongly suggests that conduction through porous Silicon layers is governed by hopping between surface states.
PACS: 68.55.-a – Thin film structure and morphology / 72.20.-i – Conductivity phenomena in semiconductors and insulators / 73.20.Hb – Impurity and defect levels; energy states of adsorbed species
© EDP Sciences, 1998
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