Eur. Phys. J. AP
Volume 2, Number 2, May 1998
|Page(s)||107 - 110|
|Published online||15 May 1998|
Conductivity in porous silicon*
Laboratoire de Physique des Semiconducteurs, Département de Physique,
Faculté des Sciences de Monastir, 5000 Monastir, Tunisia
2 Groupe de Physique des Solides, Universités Paris 6 et Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
Corresponding author: email@example.com
Revised: 16 October 1997
Accepted: 27 February 1998
Published online: 15 May 1998
Admittance spectroscopy has been performed on Al dots deposited on porous Silicon grown on p+ substrates. They exhibit d.c. current-voltage characteristics of a metal-insulator-semiconductor structure containing a large concentration of localized states in the insulator. The admittance is composed of a frequency (ω) independent conductance while the reactance varies as ωs with s = 1. This strongly suggests that conduction through porous Silicon layers is governed by hopping between surface states.
PACS: 68.55.-a – Thin film structure and morphology / 72.20.-i – Conductivity phenomena in semiconductors and insulators / 73.20.Hb – Impurity and defect levels; energy states of adsorbed species
© EDP Sciences, 1998
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