Eur. Phys. J. AP
Volume 2, Number 2, May 1998
|Page(s)||107 - 110|
|Published online||15 May 1998|
Conductivity in porous silicon*
Laboratoire de Physique des Semiconducteurs, Département de Physique,
Faculté des Sciences de Monastir, 5000 Monastir, Tunisia
2 Groupe de Physique des Solides, Universités Paris 6 et Paris 7, Tour 23, 2 place Jussieu, 75251 Paris Cedex 05, France
Corresponding author: firstname.lastname@example.org
Revised: 16 October 1997
Accepted: 27 February 1998
Published online: 15 May 1998
Admittance spectroscopy has been performed on Al dots deposited on porous Silicon grown on p+ substrates. They exhibit d.c. current-voltage characteristics of a metal-insulator-semiconductor structure containing a large concentration of localized states in the insulator. The admittance is composed of a frequency (ω) independent conductance while the reactance varies as ωs with s = 1. This strongly suggests that conduction through porous Silicon layers is governed by hopping between surface states.
PACS: 68.55.-a – Thin film structure and morphology / 72.20.-i – Conductivity phenomena in semiconductors and insulators / 73.20.Hb – Impurity and defect levels; energy states of adsorbed species
© EDP Sciences, 1998
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.