Eur. Phys. J. AP
Volume 2, Number 2, May 1998
|Page(s)||99 - 105|
|Published online||15 May 1998|
Nucleation of partial dislocations from a surface-step in semiconductors: a first approach of the mobility effect*
Laboratoire de Métallurgie Physique (UMR 6630 CNRS), Université de Poitiers, BP 179,
86960 Futuroscope Cedex, France
Corresponding author: Sandrine.Brochard@lmp.univ-poitiers.fr
Revised: 24 February 1998
Accepted: 3 March 1998
Published online: 15 May 1998
The nucleation of perfect or partial dislocations from a surface-step of a f.c.c. or diamond-like material is frequently observed. In a recent paper, it is shown how the "stress—stacking-fault energy" plane can be divided into three zones where a partial or a complete dislocation will or will not nucleate. In compound semiconductors, dislocations can dissociate into α or β partial dislocations with mobilities appreciably different. In this paper, this effect is taken into account and yields to large modifications in the partial or perfect dislocations nucleation conditions. The case of GaAs is specially examined.
PACS: 61.72.Bb – Theories and models of crystal defects / 68.55.Jk – Structure and morphology; thickness / 62.20.Dc – Elasticity, elastic constants
© EDP Sciences, 1998
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