| Issue |
Eur. Phys. J. Appl. Phys.
Volume 52, Number 2, November 2010
|
|
|---|---|---|
| Article Number | 20303 | |
| Number of page(s) | 7 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2010142 | |
| Published online | 08 October 2010 | |
https://doi.org/10.1051/epjap/2010142
Study of crystallization rate constant of (Se80Te20)100-xAgx chalcogenide glasses
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev
University, Amritsar, 143005 Punjab, India
Corresponding author: rthangaraj@rediffmail.com
Received:
25
February
2010
Revised:
28
April
2010
Accepted:
4
August
2010
Published online:
8
October
2010
The present paper reports the preparation of (Se80Te20)100-xAgx (0 ≤ x ≤ 4) chalcogenide glasses in bulk by using melt quenching technique. DSC runs of these samples have been taken at four different heating rates (5, 10, 15, 20 K/min). The variation in crystallization temperature Tc with Ag concentration at different heating rates has been studied. A strong co-relation between the pre-exponential factor K0 of rate constant K of crystallization and activation energy of crystallization Ec has been observed. The variation of rate constant K with composition and the dependence of Ec with Ag concentration have been studied.
© EDP Sciences, 2010
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