Issue |
Eur. Phys. J. Appl. Phys.
Volume 48, Number 2, November 2009
|
|
---|---|---|
Article Number | 20504 | |
Number of page(s) | 6 | |
Section | Surfaces, Interfaces and Films | |
DOI | https://doi.org/10.1051/epjap/2009151 | |
Published online | 22 September 2009 |
https://doi.org/10.1051/epjap/2009151
Structure and optical constants of electron beam deposited zinc nitride films
1
Physics department, Faculty of Science, Sohag University, 82524 Sohag, Egypt
2
Physics department, Teachers College, King Saud University, 11148 Riyadh, KSA
Corresponding author: hussein_abdelhafez2000@yahoo.com
Received:
1
May
2009
Revised:
15
June
2009
Accepted:
15
July
2009
Published online:
22
September
2009
Zinc nitride (ZnN) films were prepared by electron beam evaporation technique. The effect of heat treatments on the structural and optical properties of these films were studied. The as-deposited films show amorphous structure and some peaks which are related to Zn3N2 and ZnO can be observed for annealed films. The study of the optical gap shows that these films have direct optical band gap about 3.2 eV at temperature 350 °C. At high temperature, the ZnN films become more opaque and resistive. Other optical parameters such as refractive index, extinction coefficient and dispersion parameters were investigated as a function of annealing temperature.
PACS: 61.05.C- – X-ray diffraction and scattering / 78.66.-w – Optical properties of specific thin films / 73.61.-r – Electrical properties of specific thin films
© EDP Sciences, 2009
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