Eur. Phys. J. AP
Volume 8, Number 3, December 1999
|Page(s)||215 - 224|
|Published online||15 December 1999|
Annealing and thickness effects on some electrical and optical properties of Sb:SnO2 films
Physics Department, Faculty of Science, Sohag, Egypt
Corresponding author: firstname.lastname@example.org
Revised: 12 August 1999
Accepted: 7 October 1999
Published online: 15 December 1999
Effects of annealing and film thickness on the electrical and optical properties of Sb:SnO2 films deposited by electron beam from bulk samples prepared using sintering technique have been investigated. A compromise between low resistivity and high transparency of the film has been studied using the factor of merit. This factor, which has been found maximum for film 100 nm thick annealed at 550 °C for 15 min, seemed to be enhanced with increasing annealing time and/or film thickness confirming the simultaneous improvements of transparency and conductance with the latters. Other optical and electrical parameters such as refractive index, width of energy gap, density of localized states, concentration and mobility of carriers and Seebeck coefficient have been studied also, discussed and correlated to the microstructure changes with annealing and film thickness.
PACS: 73.61.-r – Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots) / 78.66.-w – Optical properties of specific thin films, surfaces, and low-dimensional structures
© EDP Sciences, 1999
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