The European Physical Journal Applied Physics (EPJ AP)

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

M. Gassoumi, S. Saadaoui, M.M. Ben Salem, C. Gaquiere and H. Maaref

Eur. Phys. J. Appl. Phys., 55 3 (2011) 30101

Published online: 18 August 2011

DOI: 10.1051/epjap/2011110136

M. Gassoumi

S. Saadaoui

M.M. Ben Salem

C. Gaquiere

H. Maaref

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