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Raman study on dislocation in high Al content Al_xGa_1−xN

X. Pan, X.L. Wang, H.L. Xiao, C.M. Wang, C. Feng, L.J. Jiang, H. Yin and H. Chen

Eur. Phys. J. Appl. Phys., 58 1 (2012) 10102

Published online: 29 March 2012

DOI: 10.1051/epjap/2012120004

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The European Physical Journal Applied Physics (EPJ AP)

Editors-in-Chief: Vincent Mauchamp and Philippe Moreau - Editorial board
ISSN: 1286-0042 - eISSN: 1286-0050
Frequency: monthly
Copyright / Published by: EDP Sciences

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Raman study on dislocation in high Al content AlxGa1−xN

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Raman study on dislocation in high Al content Al_xGa_1−xN